Технічний опис SK8603190L Panasonic
Description: MOSFET N-CH 30V 12A/19A 8HSO, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V, Power Dissipation (Max): 2.7W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 3V @ 1.01mA, Supplier Device Package: HSO8-F4-B, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 10 V.
Інші пропозиції SK8603190L
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SK8603190L | Виробник : Panasonic Electronic Components |
Description: MOSFET N-CH 30V 12A/19A 8HSO Packaging: Tape & Reel (TR) Package / Case: 8-PowerSMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V Power Dissipation (Max): 2.7W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 3V @ 1.01mA Supplier Device Package: HSO8-F4-B Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 10 V |
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