Продукція > SEMIKRON DANFOSS > SKIIP 12HEB066V1 25230840
SKIIP 12HEB066V1 25230840
  • SKIIP 12HEB066V1 25230840
  • SKIIP 12HEB066V1 25230840

SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS

pVersion=0046&contRep=ZT&docId=005056AB90B41EDA95FB142DCEA260C4&compId=SKIIP12HEB066V1.pdf?ci_sign=e318f4bc4b631208ad90190e1b5bca4444cd4991 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED9818949E58989C143&compId=SEMIKRON_Product_Variants.pdf?ci_sign=33340dd50898ca21ea66aa8cbb85b80ce871eb0a Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V
Collector current: 15A
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: for UPS; Inverter; photovoltaics
Semiconductor structure: diode/thyristor/IGBT
Max. off-state voltage: 0.6kV
Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge
Electrical mounting: Press-Fit
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Технічний опис SKIIP 12HEB066V1 25230840 SEMIKRON DANFOSS

Category: IGBT modules, Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 600V, Collector current: 15A, Case: MiniSKiiP® 1, Gate-emitter voltage: ±20V, Pulsed collector current: 40A, Mechanical mounting: screw, Type of semiconductor module: IGBT, Application: for UPS; Inverter; photovoltaics, Semiconductor structure: diode/thyristor/IGBT, Max. off-state voltage: 0.6kV, Topology: boost chopper; IGBT three-phase bridge; single-phase diode-thyristor bridge, Electrical mounting: Press-Fit.