Технічний опис SKiiP10NAB12T4V1 Semikron
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A, Case: MiniSKiiP® 1, Type of semiconductor module: IGBT, Mechanical mounting: screw, Pulsed collector current: 12A, Application: for UPS; Inverter; photovoltaics, Max. off-state voltage: 1.2kV, Electrical mounting: Press-Fit, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Collector current: 4A, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge.
Інші пропозиції SKiiP10NAB12T4V1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SKIIP 10NAB12T4V1 25231660 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A Case: MiniSKiiP® 1 Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 12A Application: for UPS; Inverter; photovoltaics Max. off-state voltage: 1.2kV Electrical mounting: Press-Fit Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 4A Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge |
товару немає в наявності |
В кошику од. на суму грн. |
| SKIIP 10NAB12T4V1 25231660 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A
Case: MiniSKiiP® 1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 12A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 4A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; Ic: 4A
Case: MiniSKiiP® 1
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 12A
Application: for UPS; Inverter; photovoltaics
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Collector current: 4A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
товару немає в наявності
В кошику
од. на суму грн.