Технічний опис SKiiP14NAB066V1 SEMIKRON
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A, Collector current: 20A, Case: MiniSKiiP® 1, Gate-emitter voltage: ±20V, Pulsed collector current: 40A, Max. off-state voltage: 0.6kV, Electrical mounting: Press-Fit, Power: 4kW, Semiconductor structure: diode/transistor, Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT, Mechanical mounting: screw, Application: for UPS; Inverter; photovoltaics.
Інші пропозиції SKiiP14NAB066V1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SKIIP 14NAB066V1 25230610 | SEMIKRON DANFOSS |
Category: IGBT modulesDescription: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A Collector current: 20A Case: MiniSKiiP® 1 Gate-emitter voltage: ±20V Pulsed collector current: 40A Max. off-state voltage: 0.6kV Electrical mounting: Press-Fit Power: 4kW Semiconductor structure: diode/transistor Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge Type of semiconductor module: IGBT Mechanical mounting: screw Application: for UPS; Inverter; photovoltaics |
товару немає в наявності |
В кошику од. на суму грн. |
| SKIIP 14NAB066V1 25230610 |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit
Power: 4kW
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; Ic: 20A
Collector current: 20A
Case: MiniSKiiP® 1
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Max. off-state voltage: 0.6kV
Electrical mounting: Press-Fit
Power: 4kW
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Application: for UPS; Inverter; photovoltaics
товару немає в наявності
В кошику
од. на суму грн.