SKM100GB125DN SEMIKRON
Виробник: SEMIKRON
Description: SEMIKRON - SKM100GB125DN - IGBT-Modul, Halbbrücke, 100 A, 3.3 V, 150 °C, Modul
tariffCode: 85412900
Transistormontage: Platte
euEccn: NLR
rohsCompliant: YES
IGBT-Technologie: NPT IGBT [Ultrafast]
Sperrschichttemperatur Tj, max.: 150°C
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
Kollektor-Emitter-Sättigungsspannung: 3.3V
IGBT-Anschluss: Stiftbolzen
Kollektor-Emitter-Sättigungsspannung Vce(on): 3.3V
Verlustleistung Pd: -
Verlustleistung: -
Bauform - Transistor: Modul
Kollektor-Emitter-Spannung V(br)ceo: 1.2kV
Dauerkollektorstrom: 100A
Anzahl der Pins: 7Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 1.2kV
IGBT-Konfiguration: Halbbrücke
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: Zweifach n-Kanal
usEccn: EAR99
DC-Kollektorstrom: 100A
Betriebstemperatur, max.: 150°C
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Технічний опис SKM100GB125DN SEMIKRON
Description: SEMIKRON - SKM100GB125DN - IGBT-Modul, Halbbrücke, 100 A, 3.3 V, 150 °C, Modul, tariffCode: 85412900, Transistormontage: Platte, euEccn: NLR, rohsCompliant: YES, IGBT-Technologie: NPT IGBT [Ultrafast], Sperrschichttemperatur Tj, max.: 150°C, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, Kollektor-Emitter-Sättigungsspannung: 3.3V, IGBT-Anschluss: Stiftbolzen, Kollektor-Emitter-Sättigungsspannung Vce(on): 3.3V, Verlustleistung Pd: -, Verlustleistung: -, Bauform - Transistor: Modul, Kollektor-Emitter-Spannung V(br)ceo: 1.2kV, Dauerkollektorstrom: 100A, Anzahl der Pins: 7Pin(s), Produktpalette: -, Kollektor-Emitter-Spannung, max.: 1.2kV, IGBT-Konfiguration: Halbbrücke, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: Zweifach n-Kanal, usEccn: EAR99, DC-Kollektorstrom: 100A, Betriebstemperatur, max.: 150°C.
Інші пропозиції SKM100GB125DN за ціною від 9976.58 грн до 11615.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
 |
SKM100GB125DN | SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 80A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 80A Case: SEMITRANS2N Application: for UPS; Inverter; photovoltaics Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 150A Mechanical mounting: screw Version: D93 |
на замовлення 94 шт: термін постачання 14-30 дні (днів) |
|
| SKM100GB125DN |
|
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 80A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 80A
Case: SEMITRANS2N
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Version: D93
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 80A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 80A
Case: SEMITRANS2N
Application: for UPS; Inverter; photovoltaics
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mechanical mounting: screw
Version: D93
на замовлення 94 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11615.62 грн |
| 8+ | 9976.58 грн |