SKM50GB12T4 22892000 SEMIKRON DANFOSS
Виробник: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Version: D61
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Application: for UPS; frequency changer; Inverter; photovoltaics
Version: D61
Type of module: IGBT
Topology: IGBT half-bridge
Case: SEMITRANS2
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 150A
кількість в упаковці: 1 шт
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Технічний опис SKM50GB12T4 22892000 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Application: for UPS; frequency changer; Inverter; photovoltaics, Version: D61, Type of module: IGBT, Topology: IGBT half-bridge, Case: SEMITRANS2, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 50A, Pulsed collector current: 150A, кількість в упаковці: 1 шт.
Інші пропозиції SKM50GB12T4 22892000
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SKM50GB12T4 22892000 | Виробник : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 50A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Application: for UPS; frequency changer; Inverter; photovoltaics Version: D61 Type of module: IGBT Topology: IGBT half-bridge Case: SEMITRANS2 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 150A |
товар відсутній |