Продукція > INFINEON TECHNOLOGIES > SKP02N60XKSA1
SKP02N60XKSA1

SKP02N60XKSA1 Infineon Technologies

INFNS27338-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IGBT
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SKP02N60XKSA1 Infineon Technologies

Description: IGBT NPT 600V 6A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 130 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A, Supplier Device Package: PG-TO220-3-1, IGBT Type: NPT, Td (on/off) @ 25°C: 20ns/259ns, Switching Energy: 64µJ, Test Condition: 400V, 2A, 118Ohm, 15V, Gate Charge: 14 nC, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 30 W.

Інші пропозиції SKP02N60XKSA1

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
SKP02N60XKSA1 SKP02N60XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
товару немає в наявності
В кошику  од. на суму  грн.
SKP02N60XKSA1 Infineon Technologies INFNS27338-1.pdf?t.download=true&u=5oefqw fundamentals-of-power-semiconductors IGBTs IGBT PRODUCTS
товару немає в наявності
В кошику  од. на суму  грн.
SKP02N60XKSA1 fundamentals-of-power-semiconductors
SKP02N60XKSA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 64µJ
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
товару немає в наявності
В кошику  од. на суму  грн.
SKP02N60XKSA1 INFNS27338-1.pdf?t.download=true&u=5oefqw fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
IGBTs IGBT PRODUCTS
товару немає в наявності
В кошику  од. на суму  грн.