SMB10J12AHE3/52 Vishay Semiconductors
на замовлення 2617 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SMB10J12AHE3/52 Vishay Semiconductors
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ, Type of diode: TVS, Mounting: SMD, Kind of package: reel; tape, Case: SMB, Semiconductor structure: unidirectional, Leakage current: 5µA, Features of semiconductor devices: glass passivated, Manufacturer series: SMBJ, Max. forward impulse current: 50.3A, Peak pulse power dissipation: 1kW, Technology: TransZorb®, Max. off-state voltage: 12V, Breakdown voltage: 13.3V, кількість в упаковці: 1 шт.
Інші пропозиції SMB10J12AHE3/52
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SMB10J12AHE3/52 | Виробник : VISHAY |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 5µA Features of semiconductor devices: glass passivated Manufacturer series: SMBJ Max. forward impulse current: 50.3A Peak pulse power dissipation: 1kW Technology: TransZorb® Max. off-state voltage: 12V Breakdown voltage: 13.3V кількість в упаковці: 1 шт |
товар відсутній |
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SMB10J12AHE3/52 | Виробник : Vishay Semiconductor Diodes Division |
Description: TVS DIODE 12V 19.9V DO214AA |
товар відсутній |
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SMB10J12AHE3/52 | Виробник : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Mounting: SMD Kind of package: reel; tape Case: SMB Semiconductor structure: unidirectional Leakage current: 5µA Features of semiconductor devices: glass passivated Manufacturer series: SMBJ Max. forward impulse current: 50.3A Peak pulse power dissipation: 1kW Technology: TransZorb® Max. off-state voltage: 12V Breakdown voltage: 13.3V |
товар відсутній |