SMB10J12AHE3/52 Vishay Semiconductors
на замовлення 2617 шт:
термін постачання 21-30 дні (днів)
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Технічний опис SMB10J12AHE3/52 Vishay Semiconductors
Description: TVS DIODE 12VWM 19.9VC DO214AA, Packaging: Tape & Reel (TR), Package / Case: DO-214AA, SMB, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 150°C (TJ), Current - Peak Pulse (10/1000µs): 50.3A, Voltage - Reverse Standoff (Typ): 12V, Supplier Device Package: DO-214AA (SMB), Unidirectional Channels: 1, Voltage - Breakdown (Min): 13.3V, Voltage - Clamping (Max) @ Ipp: 19.9V, Power - Peak Pulse: 1000W (1kW), Power Line Protection: No, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SMB10J12AHE3/52
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SMB10J12AHE3/52 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: TVS DIODE 12VWM 19.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 50.3A Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19.9V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SMB10J12AHE3/52 | Виробник : VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1kW; 13.3V; 50.3A; unidirectional; SMB; TransZorb®; SMBJ Manufacturer series: SMBJ Leakage current: 5µA Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 50.3A Peak pulse power dissipation: 1kW Kind of package: 7 inch reel; tape Semiconductor structure: unidirectional Case: SMB Features of semiconductor devices: glass passivated Mounting: SMD Technology: TransZorb® Type of diode: TVS |
товару немає в наявності |