SMB10J30A-E3/52 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30VWM 48.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.7A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Part Status: Active
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
750+ | 21.14 грн |
1500+ | 17.33 грн |
2250+ | 15.43 грн |
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Технічний опис SMB10J30A-E3/52 Vishay General Semiconductor - Diodes Division
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 1kW; 35.05V; 20.7A; unidirectional; SMB; reel,tape; SMBJ, Type of diode: TVS, Peak pulse power dissipation: 1kW, Max. off-state voltage: 30V, Breakdown voltage: 35.05V, Max. forward impulse current: 20.7A, Semiconductor structure: unidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Manufacturer series: SMBJ, кількість в упаковці: 750 шт.
Інші пропозиції SMB10J30A-E3/52 за ціною від 13.78 грн до 41.78 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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SMB10J30A-E3/52 | Виробник : Vishay General Semiconductor | ESD Suppressors / TVS Diodes 1000W 30V 5% Uni |
на замовлення 2249 шт: термін постачання 21-30 дні (днів) |
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SMB10J30A-E3/52 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 30VWM 48.4VC DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 20.7A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 1000W (1kW) Power Line Protection: No Part Status: Active |
на замовлення 3974 шт: термін постачання 21-31 дні (днів) |
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SMB10J30A-E3/52 | Виробник : Vishay | TVS Diode Single Uni-Dir 30V 1KW 2-Pin SMB T/R |
товар відсутній |
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SMB10J30A-E3/52 | Виробник : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1kW; 35.05V; 20.7A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 30V Breakdown voltage: 35.05V Max. forward impulse current: 20.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ кількість в упаковці: 750 шт |
товар відсутній |
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SMB10J30A-E3/52 | Виробник : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1kW; 35.05V; 20.7A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 1kW Max. off-state voltage: 30V Breakdown voltage: 35.05V Max. forward impulse current: 20.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товар відсутній |