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SMBJ8.0CD-M3/H Vishay General Semiconductor - Diodes Division

Description: TVS DIODE 8VWM 13.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.8A
Voltage - Reverse Standoff (Typ): 8V
Supplier Device Package: DO-214AA (SMBJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.03V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 6750 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна |
---|---|
750+ | 15.25 грн |
1500+ | 9.98 грн |
2250+ | 9.19 грн |
5250+ | 8.27 грн |
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Технічний опис SMBJ8.0CD-M3/H Vishay General Semiconductor - Diodes Division
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 600W; 9.03V; 44.8A; bidirectional; SMB; TransZorb®; SMBJ, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 8V, Breakdown voltage: 9.03V, Max. forward impulse current: 44.8A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 35µA, Kind of package: 7 inch reel; tape, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Manufacturer series: SMBJ, кількість в упаковці: 1 шт.
Інші пропозиції SMBJ8.0CD-M3/H за ціною від 15.86 грн до 35.73 грн
Фото | Назва | Виробник | Інформація |
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SMBJ8.0CD-M3/H | Виробник : Vishay General Semiconductor - Diodes Division |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 44.8A Voltage - Reverse Standoff (Typ): 8V Supplier Device Package: DO-214AA (SMBJ) Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.03V Voltage - Clamping (Max) @ Ipp: 13.4V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 7250 шт: термін постачання 21-31 дні (днів) |
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SMBJ8.0CD-M3/H | Виробник : VISHAY |
![]() Description: Diode: TVS; 600W; 9.03V; 44.8A; bidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 9.03V Max. forward impulse current: 44.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 35µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ кількість в упаковці: 1 шт |
товару немає в наявності |
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SMBJ8.0CD-M3/H | Виробник : Vishay General Semiconductor |
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товару немає в наявності |
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SMBJ8.0CD-M3/H | Виробник : VISHAY |
![]() Description: Diode: TVS; 600W; 9.03V; 44.8A; bidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 9.03V Max. forward impulse current: 44.8A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 35µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
товару немає в наявності |