SMBT3904E6433HTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 330 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: PG-SOT23
Відгуки про товар
Написати відгук
Технічний опис SMBT3904E6433HTMA1 Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Current - Collector Cutoff (Max): 50nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power - Max: 330 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 200 mA, Supplier Device Package: PG-SOT23.
Інші пропозиції SMBT3904E6433HTMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SMBT3904E6433HTMA1 | Виробник : Infineon Technologies |
Bipolar Transistors - BJT NPN Silicon Switch TRANSISTOR |
товару немає в наявності |