SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
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Технічний опис SMCJ10AHE3/57T Vishay Semiconductor Diodes Division
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 10V, Breakdown voltage: 11.1V, Max. forward impulse current: 88.2A, Semiconductor structure: unidirectional, Case: SMC, Mounting: SMD, Leakage current: 5µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Technology: TransZorb®, Manufacturer series: SMCJ, кількість в упаковці: 1 шт.
Інші пропозиції SMCJ10AHE3/57T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SMCJ10AHE3/57T | Виробник : VISHAY |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ кількість в упаковці: 1 шт |
товар відсутній |
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SMCJ10AHE3/57T | Виробник : Vishay Semiconductors |
ESD Suppressors / TVS Diodes 1.5KW 10V 5% Unidir AEC-Q101 Qualified |
товар відсутній |
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SMCJ10AHE3/57T | Виробник : VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 11.1V; 88.2A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 88.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
товар відсутній |