Технічний опис SMCJ10CA-M3/9AT Vishay General Semiconductor - Diodes Division
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; DO214AB,SMC, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 10V, Breakdown voltage: 11.1...12.3V, Max. forward impulse current: 88.2A, Semiconductor structure: bidirectional, Case: DO214AB; SMC, Mounting: SMD, Leakage current: 5µA, Manufacturer series: SMCJ, Technology: TransZorb®, Features of semiconductor devices: glass passivated, Kind of package: 13 inch reel; tape.
Інші пропозиції SMCJ10CA-M3/9AT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SMCJ10CA-M3/9AT | Vishay Semiconductors |
 ESD Protection Diodes / TVS Diodes 1.5KW,10V 5%,BIDIR,SMC TVS |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. |
| SMCJ10CA-M3/9AT | VISHAY |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 88.2A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. |
| SMCJ10CA-M3/9AT |
|
Виробник: Vishay Semiconductors
ESD Protection Diodes / TVS Diodes 1.5KW,10V 5%,BIDIR,SMC TVS
ESD Protection Diodes / TVS Diodes 1.5KW,10V 5%,BIDIR,SMC TVS
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.
| SMCJ10CA-M3/9AT |
|
Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 11.1÷12.3V; 88.2A; bidirectional; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 88.2A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel; tape
товару немає в наявності
Мінімальне замовлення: 3500 шт
В кошику
од. на суму грн.