Технічний опис SMMBT5551LT3G ON Semiconductor
Description: TRANS NPN 160V 0.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 160 V, Power - Max: 225 mW.
Інші пропозиції SMMBT5551LT3G
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SMMBT5551LT3G | Виробник : ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R |
товару немає в наявності |
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SMMBT5551LT3G | Виробник : ON Semiconductor |
Trans GP BJT NPN 160V 0.6A 300mW Automotive 3-Pin SOT-23 T/R |
товару немає в наявності |
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SMMBT5551LT3G | Виробник : onsemi |
Description: TRANS NPN 160V 0.6A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 225 mW |
товару немає в наявності |
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SMMBT5551LT3G | Виробник : onsemi |
Description: TRANS NPN 160V 0.6A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 225 mW |
товару немає в наявності |
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SMMBT5551LT3G | Виробник : onsemi |
Bipolar Transistors - BJT SS SOT23 HV XSTR SPCL TR |
товару немає в наявності |
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| SMMBT5551LT3G | Виробник : ONSEMI |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 160V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 80...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |



