| Кількість | Ціна |
|---|---|
| 15+ | 23.10 грн |
| 21+ | 15.72 грн |
| 100+ | 8.65 грн |
| 500+ | 5.37 грн |
| 1000+ | 3.97 грн |
| 3000+ | 3.56 грн |
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Технічний опис SMUN5312DW1T1G onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 187mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Resistor - Base (R1): 22kOhms, Resistor - Emitter Base (R2): 22kOhms, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SMUN5312DW1T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| SMUN5312DW1T1G | Виробник : ON Semiconductor |
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на замовлення 1330 шт: термін постачання 14-28 дні (днів) |
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SMUN5312DW1T1G | Виробник : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SMUN5312DW1T1G | Виробник : onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 187mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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SMUN5312DW1T1G | Виробник : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Mounting: SMD Case: SC70-6; SC88; SOT363 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.25W Kind of transistor: BRT; complementary pair Polarisation: bipolar Collector-emitter voltage: 50V Base resistor: 22kΩ Base-emitter resistor: 22kΩ Application: automotive industry Type of transistor: NPN / PNP |
товару немає в наявності |