SN7002WH6327XTSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.56 грн |
| 6000+ | 4.82 грн |
| 9000+ | 4.55 грн |
| 15000+ | 3.98 грн |
| 21000+ | 3.81 грн |
| 30000+ | 3.65 грн |
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Технічний опис SN7002WH6327XTSA1 Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.8V @ 26µA, Supplier Device Package: PG-SOT323, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SN7002WH6327XTSA1 за ціною від 6.01 грн до 26.41 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SN7002WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323 Mounting: SMD Drain-source voltage: 60V Drain current: 0.23A Power dissipation: 0.5W On-state resistance: 5Ω Gate-source voltage: ±20V Polarisation: unipolar Case: SOT323 Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SIPMOS™ |
на замовлення 77 шт: термін постачання 14-30 дні (днів) |
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SN7002WH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 230MA SOT323-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 26µA Supplier Device Package: PG-SOT323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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| SN7002WH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
On-state resistance: 5Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.23A; 0.5W; SOT323
Mounting: SMD
Drain-source voltage: 60V
Drain current: 0.23A
Power dissipation: 0.5W
On-state resistance: 5Ω
Gate-source voltage: ±20V
Polarisation: unipolar
Case: SOT323
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SIPMOS™
на замовлення 77 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 24.16 грн |
| 23+ | 18.61 грн |
| 27+ | 15.54 грн |
| 38+ | 11.13 грн |
| SN7002WH6327XTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 230MA SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 230mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 26µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 26.41 грн |
| 20+ | 15.63 грн |
| 100+ | 9.77 грн |
| 500+ | 6.78 грн |
| 1000+ | 6.01 грн |