Технічний опис SO642
Description: TRANS NPN 300V 0.1A SOT-23-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power - Max: 310 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SOT-23-3, Frequency - Transition: 50MHz.
Інші пропозиції SO642
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
SO642 | STMicroelectronics |
Description: TRANS NPN 300V 0.1A SOT-23-3DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 50MHz |
товару немає в наявності |
Мінімальне замовлення: 18000 шт В кошику од. на суму грн. |
|
SO642 | STMicroelectronics |
Description: TRANS NPN 300V 0.1A SOT-23-3Power - Max: 310 mW Voltage - Collector Emitter Breakdown (Max): 300 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-23-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SO642 | onsemi / Fairchild |
Bipolar Transistors - BJT |
товару немає в наявності |
В кошику од. на суму грн. | |
|
SO642 | STMicroelectronics |
Bipolar Transistors - BJT NPN High Voltage |
товару немає в наявності |
В кошику од. на суму грн. |
| SO642 |
![]() |
Виробник: STMicroelectronics
Description: TRANS NPN 300V 0.1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
Description: TRANS NPN 300V 0.1A SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
товару немає в наявності
Мінімальне замовлення: 18000 шт
В кошику
од. на суму грн.
| SO642 |
![]() |
Виробник: STMicroelectronics
Description: TRANS NPN 300V 0.1A SOT-23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN 300V 0.1A SOT-23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SO642 |
![]() |
Виробник: onsemi / Fairchild
Bipolar Transistors - BJT
Bipolar Transistors - BJT
товару немає в наявності
В кошику
од. на суму грн.
| SO642 |
![]() |
Виробник: STMicroelectronics
Bipolar Transistors - BJT NPN High Voltage
Bipolar Transistors - BJT NPN High Voltage
товару немає в наявності
В кошику
од. на суму грн.




