SP000683158 Infineon

Description: SPP11N80C3XKSA1 - COOLMOS N-CHAN, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 3.9V @ 680µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 450mOhm @ 7.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active.