| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 177.19 грн |
| 10+ | 84.95 грн |
| 100+ | 57.92 грн |
| 500+ | 52.81 грн |
| 1000+ | 49.77 грн |
| 2500+ | 45.22 грн |
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Технічний опис SP8K2HZGTB ROHM Semiconductor
Description: MOSFET 2N-CH 30V 6A 8SOP, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V, Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 1.4W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SP8K2HZGTB за ціною від 61.60 грн до 205.81 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SP8K2HZGTB | Rohm Semiconductor |
 Description: MOSFET 2N-CH 30V 6A 8SOPGate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 1.4W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA |
на замовлення 2390 шт: термін постачання 21-31 дні (днів) |
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| SP8K2HZGTB |
|
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Description: MOSFET 2N-CH 30V 6A 8SOP
Gate Charge (Qg) (Max) @ Vgs: 10.1nC @ 5V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.4W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
на замовлення 2390 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.81 грн |
| 10+ | 128.26 грн |
| 100+ | 88.26 грн |
| 500+ | 66.76 грн |
| 1000+ | 61.60 грн |