| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.00 грн |
| 10+ | 100.03 грн |
| 100+ | 58.61 грн |
| 500+ | 46.81 грн |
| 1000+ | 44.39 грн |
| 2500+ | 40.94 грн |
| 5000+ | 38.38 грн |
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Технічний опис SP8K32HZGTB ROHM Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V, Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Інші пропозиції SP8K32HZGTB за ціною від 48.45 грн до 166.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SP8K32HZGTB | Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 4.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 2114 шт: термін постачання 21-31 дні (днів) |
|
| SP8K32HZGTB |
|
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 2114 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 166.98 грн |
| 10+ | 103.43 грн |
| 100+ | 70.35 грн |
| 500+ | 52.73 грн |
| 1000+ | 48.45 грн |