SP8M10FRATB ROHM
Виробник: ROHMDescription: ROHM - SP8M10FRATB - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.017 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 7A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.017ohm
Verlustleistung, p-Kanal: 2W
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOP
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Komplementärer n- und p-Kanal
Verlustleistung, n-Kanal: 2W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
на замовлення 2380 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 80.02 грн |
| 500+ | 62.97 грн |
| 1000+ | 47.31 грн |
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Технічний опис SP8M10FRATB ROHM
Description: ROHM - SP8M10FRATB - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.017 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 7A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.017ohm, Verlustleistung, p-Kanal: 2W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOP, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Komplementärer n- und p-Kanal, Verlustleistung, n-Kanal: 2W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (23-Jan-2024).
Інші пропозиції SP8M10FRATB за ціною від 46.68 грн до 148.97 грн
| Фото | Назва | Виробник | Інформація |
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SP8M10FRATB | Виробник : Rohm Semiconductor |
Description: 4V DRIVE NCH+PCH MOSFET (AEC-Q10 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 1193 шт: термін постачання 21-31 дні (днів) |
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SP8M10FRATB | Виробник : ROHM |
Description: ROHM - SP8M10FRATB - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 7 A, 7 A, 0.017 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.017ohm Verlustleistung, p-Kanal: 2W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOP Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.017ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Komplementärer n- und p-Kanal Verlustleistung, n-Kanal: 2W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
на замовлення 2380 шт: термін постачання 21-31 дні (днів) |
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SP8M10FRATB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-4.5A Pulsed drain current: 18...28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/90mΩ Mounting: SMD Gate charge: 8.4/8.5nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
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SP8M10FRATB | Виробник : Rohm Semiconductor |
Description: 4V DRIVE NCH+PCH MOSFET (AEC-Q10 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V, 850pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V, 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V, 8.5nC @ 5V FET Feature: Logic Level Gate, 4V Drive Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
товару немає в наявності |
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SP8M10FRATB | Виробник : ROHM Semiconductor |
MOSFETs 4V Drive Nch+Pch MOSFET (AEC-Q101 Qualified) - SP8M10FRA. Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power t |
товару немає в наявності |
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SP8M10FRATB | Виробник : ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 7/-4.5A; Idm: 18÷28A; 2W Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 7/-4.5A Pulsed drain current: 18...28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 37/90mΩ Mounting: SMD Gate charge: 8.4/8.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |