SP8M4FU6TB Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Відгуки про товар
Написати відгук
Технічний опис SP8M4FU6TB Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 9A, 7A, Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Інші пропозиції SP8M4FU6TB
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
SP8M4FU6TB | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 9A/7A 8SOP Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Current - Continuous Drain (Id) @ 25°C: 9A, 7A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| SP8M4FU6TB | ROHM Semiconductor |
MOSFET SWITCHING Nch/Pch 4V |
товару немає в наявності |
В кошику од. на суму грн. |
| SP8M4FU6TB |
|
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 30V 9A/7A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 9A, 7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SP8M4FU6TB |
|
Виробник: ROHM Semiconductor
MOSFET SWITCHING Nch/Pch 4V
MOSFET SWITCHING Nch/Pch 4V
товару немає в наявності
В кошику
од. на суму грн.