SP8M51FRATB ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 176.38 грн |
| 10+ | 122.26 грн |
| 100+ | 72.49 грн |
| 500+ | 61.72 грн |
| 1000+ | 54.19 грн |
| 2500+ | 48.60 грн |
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Технічний опис SP8M51FRATB ROHM Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V, Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SP8M51FRATB
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SP8M51FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOPConfiguration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SP8M51FRATB | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A 8SOPQualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta) Drain to Source Voltage (Vdss): 100V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| SP8M51FRATB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Description: MOSFET N/P-CH 100V 3A 8SOP
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| SP8M51FRATB |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 100V 3A 8SOP
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V
Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 10V, 1550pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta)
Drain to Source Voltage (Vdss): 100V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.


