SP8M51HZGTB Rohm Semiconductor

Description: MOSFET N/P-CH 100V 3A 8SOP, Part Status: Active, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 5V, 12.5nC @ 5V, Rds On (Max) @ Id, Vgs: 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V, 1550pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2.5A (Ta), Drain to Source Voltage (Vdss): 100V, Power - Max: 2W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).