Технічний опис SPB80N04S2-H4 INFINEON
Description: MOSFET N-CH 40V 80A TO263-3, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, FET Type: N-Channel.
Інші пропозиції SPB80N04S2-H4
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
SPB80N04S2-H4 | Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO263-3Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V FET Type: N-Channel |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| SPB80N04S2-H4 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
Description: MOSFET N-CH 40V 80A TO263-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5890 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
FET Type: N-Channel
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.



