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SPD02N60S5BTMA1

SPD02N60S5BTMA1 Infineon Technologies

SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 1.8A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 13370 шт:
термін постачання 21-31 дні (днів)
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568+35.41 грн
Мінімальне замовлення: 568
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Технічний опис SPD02N60S5BTMA1 Infineon Technologies

Description: MOSFET N-CH 600V 1.8A TO252-3, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 5.5V @ 80µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V.

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SPD02N60S5BTMA1 SPD02N60S5BTMA1 Виробник : Infineon Technologies SPD_U02N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c91374727 Description: MOSFET N-CH 600V 1.8A TO252-3
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
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SPD02N60S5BTMA1 SPD02N60S5BTMA1 Виробник : Infineon Technologies Infineon_SPD_U02N60S5_DS_v02_05_en-1994836.pdf MOSFET LOW POWER_LEGACY
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