SPD04P10PLGBTMA1 INFINEON
Виробник: INFINEON
Description: INFINEON - SPD04P10PLGBTMA1 - Leistungs-MOSFET, p-Kanal, 100 V, 4.2 A, 0.85 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.2A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.5V
Verlustleistung: 38W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.85ohm
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Технічний опис SPD04P10PLGBTMA1 INFINEON
Description: INFINEON - SPD04P10PLGBTMA1 - Leistungs-MOSFET, p-Kanal, 100 V, 4.2 A, 0.85 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 4.2A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1.5V, Verlustleistung: 38W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.85ohm.
Інші пропозиції SPD04P10PLGBTMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SPD04P10PLGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4.2A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 380µA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SPD04P10PLGBTMA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 4.2A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Power Dissipation (Max): 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 380µA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SPD04P10PLGBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.2A Power dissipation: 38W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| SPD04P10PLGBTMA1 | Infineon Technologies |
Trans MOSFET P-CH 100V 4.2A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |
| SPD04P10PLGBTMA1 | Infineon Technologies |
Trans MOSFET P-CH 100V 4.2A Automotive 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| SPD04P10PLGBTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 4.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 380µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 4.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 380µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SPD04P10PLGBTMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 4.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 380µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 100V 4.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 380µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 372 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SPD04P10PLGBTMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 38W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.2A; 38W; PG-TO252-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.2A
Power dissipation: 38W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SPD04P10PLGBTMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH 100V 4.2A Automotive 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 100V 4.2A Automotive 3-Pin(2+Tab) DPAK T/R
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SPD04P10PLGBTMA1 |
|
Виробник: Infineon Technologies
Trans MOSFET P-CH 100V 4.2A Automotive 3-Pin(2+Tab) DPAK T/R
Trans MOSFET P-CH 100V 4.2A Automotive 3-Pin(2+Tab) DPAK T/R
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.