SPD08N50C3

SPD08N50C3 Infineon Technologies


Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Виробник: Infineon Technologies
Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис SPD08N50C3 Infineon Technologies

Description: COOLMOS, 7.6A, 500V, 0.6OHM, N-C, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 350µA, Supplier Device Package: PG-TO252-3-313, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V.

Інші пропозиції SPD08N50C3

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
SPD08N50C3 SPD08N50C3 Виробник : Infineon Technologies Infineon-SPD08N50C3-DataSheet-v02_07-EN-958030.pdf MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS C3
товар відсутній