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SPD15N06S2L-64 INFINEON


Infineon-IPD15N06S2L_64-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4334ab35afe&ack=t
Виробник: INFINEON
07+ TO-252/D-PAK
на замовлення 30000 шт:

термін постачання 14-28 дні (днів)
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Технічний опис SPD15N06S2L-64 INFINEON

Description: MOSFET N-CH 55V 19A TO252-3, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2V @ 14µA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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SPD15N06S2L-64 SPD15N06S2L-64 Виробник : Infineon Technologies Infineon-IPD15N06S2L_64-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4334ab35afe&ack=t Description: MOSFET N-CH 55V 19A TO252-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 445 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 14µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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SPD15N06S2L64 SPD15N06S2L64 Виробник : Infineon Technologies Infineon-IPD15N06S2L_64-DS-v01_00-en.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 13A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 25 V
товару немає в наявності
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