Технічний опис SPD18P06P INFINEON
Description: MOSFET P-CH 60V 18.6A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SPD18P06P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SPD18P06P | Infineon Technologies |
 Description: MOSFET P-CH 60V 18.6A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
|
SPD18P06P | Infineon Technologies |
Description: MOSFET P-CH 60V 18.6A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SPD18P06P | Infineon Technologies |
MOSFETs Discrete Semiconductor Products MOSFETs - Single - MOSFET P-CH 60V 18.6A TO-252 |
товару немає в наявності |
В кошику од. на суму грн. |
| SPD18P06P |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 18.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 18.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SPD18P06P |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 18.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 18.6A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SPD18P06P |
|
Виробник: Infineon Technologies
MOSFETs Discrete Semiconductor Products MOSFETs - Single - MOSFET P-CH 60V 18.6A TO-252
MOSFETs Discrete Semiconductor Products MOSFETs - Single - MOSFET P-CH 60V 18.6A TO-252
товару немає в наявності
В кошику
од. на суму грн.