Технічний опис SPD30N06S2-23 INFINEON
Description: MOSFET N-CH 55V 30A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 4V @ 50µA, Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SPD30N06S2-23
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
SPD30N06S2-23 | Infineon Technologies |
Description: MOSFET N-CH 55V 30A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 50µA Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| SPD30N06S2-23 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 30A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.



