SPD30P06P

Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 30A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)

Виробник: Infineon Technologies
MOSFETs P-Ch -60V -30A DPAK-2