SPI80N03S2L-03
Виробник:
на замовлення 5164 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SPI80N03S2L-03
Description: MOSFET N-CH 30V 80A TO262-3, Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO262-3-1, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube.
Інші пропозиції SPI80N03S2L-03
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SPI80N03S2L-03 | Infineon Technologies |
Description: MOSFET N-CH 30V 80A TO262-3 Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO262-3-1 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SPI80N03S2L-03 | Infineon Technologies |
MOSFET N-KANAL POWER MOS |
товару немає в наявності |
В кошику од. на суму грн. |
| SPI80N03S2L-03 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 30V 80A TO262-3
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| SPI80N03S2L-03 |
|
Виробник: Infineon Technologies
MOSFET N-KANAL POWER MOS
MOSFET N-KANAL POWER MOS
товару немає в наявності
В кошику
од. на суму грн.