SPN02N60S5 INF

Description: MOSFET N-CH 600V 400MA SOT223-4, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT223-4, Vgs(th) (Max) @ Id: 5.5V @ 80µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 400mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).