Технічний опис SPP07N60C3 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4.6A, Power dissipation: 83W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 0.6Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Technology: CoolMOS™.
Інші пропозиції SPP07N60C3
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SPP07N60C3 | Виробник : INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 4.6A; 83W; PG-TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.6A Power dissipation: 83W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: CoolMOS™ |
товару немає в наявності |