SPP15P10P ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - SPP15P10P - SPP15P10 POWER FIELD-EFFECT TRANSISTOR,
tariffCode: 85412100
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
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Технічний опис SPP15P10P ROCHESTER ELECTRONICS
Description: MOSFET P-CH 100V 15A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1.54mA, Supplier Device Package: PG-TO220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V.
Інші пропозиції SPP15P10P
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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SPP15P10P | Виробник : Infineon Technologies |
Description: MOSFET P-CH 100V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Supplier Device Package: PG-TO220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V |
товару немає в наявності |