SPP15P10PHXKSA1 ROCHESTER ELECTRONICS
Виробник: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - SPP15P10PHXKSA1 - SPP15P10 20V-250V P-CHANNEL POWER MOSFET
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
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Технічний опис SPP15P10PHXKSA1 ROCHESTER ELECTRONICS
Description: MOSFET P-CH 100V 15A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1.54mA, Supplier Device Package: PG-TO220-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V.
Інші пропозиції SPP15P10PHXKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SPP15P10PHXKSA1 | Infineon Technologies |
Description: MOSFET P-CH 100V 15A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1.54mA Supplier Device Package: PG-TO220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SPP15P10PHXKSA1 | Infineon Technologies |
MOSFET TRENCH >=100V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SPP15P10PHXKSA1 | INFINEON |
Description: INFINEON - SPP15P10PHXKSA1 - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.16 ohm, TO-220, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 100 Dauer-Drainstrom Id: 15 Rds(on)-Messspannung Vgs: 10 Verlustleistung Pd: 128 Bauform - Transistor: TO-220 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: SIPMOS Wandlerpolarität: p-Kanal Betriebswiderstand, Rds(on): 0.16 Betriebstemperatur, max.: 175 Schwellenspannung Vgs: 2.1 SVHC: No SVHC (27-Jun-2018) |
товару немає в наявності |
В кошику од. на суму грн. |
| SPP15P10PHXKSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Description: MOSFET P-CH 100V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SPP15P10PHXKSA1 |
|
Виробник: Infineon Technologies
MOSFET TRENCH >=100V
MOSFET TRENCH >=100V
товару немає в наявності
В кошику
од. на суму грн.
| SPP15P10PHXKSA1 |
|
Виробник: INFINEON
Description: INFINEON - SPP15P10PHXKSA1 - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.16 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 15
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 128
Bauform - Transistor: TO-220
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: SIPMOS
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.16
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2.1
SVHC: No SVHC (27-Jun-2018)
Description: INFINEON - SPP15P10PHXKSA1 - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.16 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 15
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 128
Bauform - Transistor: TO-220
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: SIPMOS
Wandlerpolarität: p-Kanal
Betriebswiderstand, Rds(on): 0.16
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2.1
SVHC: No SVHC (27-Jun-2018)
товару немає в наявності
В кошику
од. на суму грн.