SPP15P10PHXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 15A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 2.1V @ 1.54mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 100 V
Відгуки про товар
Написати відгук
Технічний опис SPP15P10PHXKSA1 Infineon Technologies
Description: MOSFET P-CH 100V 15A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-3, Vgs(th) (Max) @ Id: 2.1V @ 1.54mA, Power Dissipation (Max): 128W (Tc), Rds On (Max) @ Id, Vgs: 240mOhm @ 10.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Drain to Source Voltage (Vdss): 100 V.
Інші пропозиції SPP15P10PHXKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SPP15P10PHXKSA1 | Виробник : Infineon Technologies |
MOSFET TRENCH >=100V |
товару немає в наявності |