Продукція > INF > SPP42N03S2L-13

SPP42N03S2L-13 INF

SPP_B_42N03S2L-13_040604.pdf
Виробник: INF
TO-220
на замовлення 10000 шт:
термін постачання 14-28 дні (днів)
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис SPP42N03S2L-13 INF

Description: MOSFET N-CH 30V 42A TO220-3, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO220-3-1, Vgs(th) (Max) @ Id: 2V @ 37µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 12.9mOhm @ 21A, 10V.

Інші пропозиції SPP42N03S2L-13

Фото Назва Виробник Інформація Доступність
Ціна
SPP42N03S2L-13 SPP42N03S2L-13 Infineon Technologies SPP_B_42N03S2L-13_040604.pdf Description: MOSFET N-CH 30V 42A TO220-3
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 37µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 21A, 10V
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SPP42N03S2L13 SPP42N03S2L13 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 42A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 37µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SPP42N03S2L-13 SPP_B_42N03S2L-13_040604.pdf
SPP42N03S2L-13
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 42A TO220-3
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 37µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 21A, 10V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
SPP42N03S2L13 fundamentals-of-power-semiconductors
SPP42N03S2L13
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 42A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 2V @ 37µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.