Технічний опис SPU02N60C3 infineon
Description: SPU02N60 - 600V COOLMOS N-CHANNE, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO-251-3-21, Vgs(th) (Max) @ Id: 3.9V @ 80µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V.
Інші пропозиції SPU02N60C3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
| SPU02N60C3 | Infineon Technologies |
Description: SPU02N60 - 600V COOLMOS N-CHANNETechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Bulk Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO-251-3-21 Vgs(th) (Max) @ Id: 3.9V @ 80µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | |
|
SPU02N60C3 | Infineon Technologies |
MOSFETs N-Ch 600V 1.8A IPAK-3 CoolMOS C3 |
товару немає в наявності |
В кошику од. на суму грн. |
| SPU02N60C3 |
![]() |
Виробник: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-21
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO-251-3-21
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| SPU02N60C3 |
![]() |
Виробник: Infineon Technologies
MOSFETs N-Ch 600V 1.8A IPAK-3 CoolMOS C3
MOSFETs N-Ch 600V 1.8A IPAK-3 CoolMOS C3
товару немає в наявності
В кошику
од. на суму грн.



