SPU08P06P
Виробник:
на замовлення 4744 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SPU08P06P
Description: MOSFET P-CH 60V 8.83A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 42W (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції SPU08P06P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SPU08P06P | Infineon Technologies |
Description: MOSFET P-CH 60V 8.83A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 42W (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| SPU08P06P |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 8.83A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 60V 8.83A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.83A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.