SPU18P06P
Виробник:
на замовлення 15000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SPU18P06P
Description: MOSFET P-CH 60V 18.6A TO251-3, Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO251-3, Vgs(th) (Max) @ Id: 4V @ 1mA, Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Інші пропозиції SPU18P06P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SPU18P06P | Infineon Technologies |
Description: MOSFET P-CH 60V 18.6A TO251-3 Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO251-3 Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. |
| SPU18P06P |
|
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 18.6A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 60V 18.6A TO251-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.