Технічний опис SPV1001N30 STMicroelectronics
Description: DIODE GEN PURP 30V 12.5A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Technology: Standard, Current - Average Rectified (Io): 12.5A, Supplier Device Package: 8-PQFN (5x6), Operating Temperature - Junction: -45°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A, Current - Reverse Leakage @ Vr: 1 µA @ 30 V.
Інші пропозиції SPV1001N30
| Фото | Назва | Виробник | Інформація |
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| SPV1001N30 | Виробник : STMicroelectronics |
 Description: DIODE GEN PURP 30V 12.5A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: Standard Current - Average Rectified (Io): 12.5A Supplier Device Package: 8-PQFN (5x6) Operating Temperature - Junction: -45°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
товару немає в наявності |
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| SPV1001N30 | Виробник : STMicroelectronics |
Description: DIODE GEN PURP 30V 12.5A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: Standard Current - Average Rectified (Io): 12.5A Supplier Device Package: 8-PQFN (5x6) Operating Temperature - Junction: -45°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
товару немає в наявності |
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SPV1001N30 | Виробник : STMicroelectronics |
Diodes - General Purpose, Power, Switching Cool bypass switch for photovoltaic app |
товару немає в наявності |