SPW20N60CFDFKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: PG-TO247-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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Технічний опис SPW20N60CFDFKSA1 Infineon Technologies
Description: MOSFET N-CH 650V 20.7A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 13.1A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: PG-TO247-3-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Інші пропозиції SPW20N60CFDFKSA1 за ціною від 244.34 грн до 292.37 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||
|---|---|---|---|---|---|---|---|---|---|
| SPW20N60CFDFKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 20.7A Power dissipation: 208W Case: TO247-3 Gate-source voltage: 20V On-state resistance: 0.22Ω Mounting: THT Kind of channel: enhancement Gate charge: 124nC |
на замовлення 324 шт: термін постачання 14-30 дні (днів) |
|
| SPW20N60CFDFKSA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 20.7A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 20.7A
Power dissipation: 208W
Case: TO247-3
Gate-source voltage: 20V
On-state resistance: 0.22Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 124nC
на замовлення 324 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 30+ | 292.37 грн |
| 120+ | 244.34 грн |