SPW55N80C3FKSA1 Infineon Technologies

Description: MOSFET N-CH 800V 54.9A TO247-3, Input Capacitance (Ciss) (Max) @ Vds: 7520 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO247-3, Rds On (Max) @ Id, Vgs: 85mOhm @ 32.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 54.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Vgs(th) (Max) @ Id: 3.9V @ 3.3mA, Power Dissipation (Max): 500W (Tc).