SQ2361CEES-T1_GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 4+ | 86.15 грн |
| 10+ | 58.47 грн |
| 100+ | 32.21 грн |
| 500+ | 19.97 грн |
| 1000+ | 14.70 грн |
| 3000+ | 13.08 грн |
| 6000+ | 11.32 грн |
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Технічний опис SQ2361CEES-T1_GE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SQ2361CEES-T1_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
SQ2361CEES-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| SQ2361CEES-T1-GE3 | Vishay | Vishay 60V P-CHANNEL (D-S) |
товару немає в наявності |
В кошику од. на суму грн. | |
| SQ2361CEES-T1/GE3 | Vishay | Vishay |
товару немає в наявності |
В кошику од. на суму грн. |
| SQ2361CEES-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SQ2361CEES-T1-GE3 |
Виробник: Vishay
Vishay 60V P-CHANNEL (D-S)
Vishay 60V P-CHANNEL (D-S)
товару немає в наявності
В кошику
од. на суму грн.