SQ3426EV-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 20.94 грн |
| 6000+ | 19.11 грн |
| 9000+ | 17.69 грн |
| 30000+ | 16.44 грн |
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Технічний опис SQ3426EV-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.042 ohm, TSOP, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 2V, Verlustleistung: 5W, SVHC: To Be Advised, Bauform - Transistor: TSOP, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET, productTraceability: No, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.042ohm.
Інші пропозиції SQ3426EV-T1_GE3 за ціною від 17.41 грн до 81.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQ3426EV-T1_GE3 | VISHAY |
Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.042 ohm, TSOP, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 5W SVHC: To Be Advised Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.042ohm |
на замовлення 36577 шт: термін постачання 21-31 дні (днів) |
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SQ3426EV-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CHANNEL 60V 7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Power Dissipation (Max): 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 41534 шт: термін постачання 21-31 дні (днів) |
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SQ3426EV-T1_GE3 | Vishay Semiconductors |
MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified |
на замовлення 59981 шт: термін постачання 21-30 дні (днів) |
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SQ3426EV-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 29A Power dissipation: 5W Case: SC74; TSOP6 Gate-source voltage: ±20V On-state resistance: 71mΩ Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1738 шт: термін постачання 14-30 дні (днів) |
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SQ3426EV-T1_GE3 | VISHAY |
Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.042 ohm, TSOP, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 5W SVHC: To Be Advised Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.042ohm |
на замовлення 36577 шт: термін постачання 21-31 дні (днів) |
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| SQ3426EV-T1_GE3 |
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Виробник: VISHAY
Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.042 ohm, TSOP, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.042ohm
Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.042 ohm, TSOP, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.042ohm
на замовлення 36577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 500+ | 22.37 грн |
| 1500+ | 18.75 грн |
| SQ3426EV-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 60V 7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 30 V
Qualification: AEC-Q101
на замовлення 41534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 54.71 грн |
| 10+ | 45.97 грн |
| 100+ | 31.84 грн |
| 500+ | 24.97 грн |
| 1000+ | 21.25 грн |
| SQ3426EV-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified
на замовлення 59981 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 48.47 грн |
| 100+ | 29.25 грн |
| 500+ | 24.46 грн |
| 1000+ | 20.79 грн |
| 3000+ | 18.47 грн |
| 6000+ | 17.41 грн |
| SQ3426EV-T1_GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 7A; Idm: 29A; 5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 29A
Power dissipation: 5W
Case: SC74; TSOP6
Gate-source voltage: ±20V
On-state resistance: 71mΩ
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1738 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 9+ | 56.65 грн |
| 12+ | 35.97 грн |
| 25+ | 31.90 грн |
| 100+ | 29.18 грн |
| 500+ | 28.59 грн |
| SQ3426EV-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.042 ohm, TSOP, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.042ohm
Description: VISHAY - SQ3426EV-T1_GE3 - Leistungs-MOSFET, n-Kanal, 60 V, 7 A, 0.042 ohm, TSOP, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 2V
Verlustleistung: 5W
SVHC: To Be Advised
Bauform - Transistor: TSOP
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: No
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.042ohm
на замовлення 36577 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 81.82 грн |
| 50+ | 51.48 грн |
| 100+ | 33.80 грн |
| 500+ | 22.37 грн |
| 1500+ | 18.75 грн |