SQ7002K-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 320MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 500mW (Tc)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 320mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис SQ7002K-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 320MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 500mW (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 320mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).