Технічний опис SQD50N04-09H-GE3 Vishay
Description: MOSFET N-CH 40V 50A TO252, Packaging: Cut Tape (CT), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V, Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-252AA, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V.
Інші пропозиції SQD50N04-09H-GE3
| Фото | Назва | Виробник | Інформація |
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SQD50N04-09H-GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 40V 50A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 25 V |
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