Технічний опис SQJ114ELP-T1_GE3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A, Application: automotive industry, Pulsed drain current: 126A, Power dissipation: 115W, Gate charge: 50nC, Polarisation: unipolar, Technology: TrenchFET®, Drain current: 33A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: PowerPAK® SO8, On-state resistance: 12.1mΩ, Mounting: SMD.
Інші пропозиції SQJ114ELP-T1_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SQJ114ELP-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A Application: automotive industry Pulsed drain current: 126A Power dissipation: 115W Gate charge: 50nC Polarisation: unipolar Technology: TrenchFET® Drain current: 33A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PowerPAK® SO8 On-state resistance: 12.1mΩ Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
| SQJ114ELP-T1_GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A
Application: automotive industry
Pulsed drain current: 126A
Power dissipation: 115W
Gate charge: 50nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 12.1mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 33A; Idm: 126A
Application: automotive industry
Pulsed drain current: 126A
Power dissipation: 115W
Gate charge: 50nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 33A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PowerPAK® SO8
On-state resistance: 12.1mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.