Технічний опис SQJB70EP-T1_GE3 Vishay / Siliconix
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8, Mounting: SMD, Kind of channel: enhancement, Type of transistor: N-MOSFET x2, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 4nC, On-state resistance: 95mΩ, Drain current: 6.5A, Power dissipation: 9W, Gate-source voltage: ±20V, Drain-source voltage: 100V, Case: PowerPAK® SO8.
Інші пропозиції SQJB70EP-T1_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| SQJB70EP-T1_GE3 | VISHAY |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Gate charge: 4nC On-state resistance: 95mΩ Drain current: 6.5A Power dissipation: 9W Gate-source voltage: ±20V Drain-source voltage: 100V Case: PowerPAK® SO8 |
товару немає в наявності |
В кошику од. на суму грн. |
| SQJB70EP-T1_GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 95mΩ
Drain current: 6.5A
Power dissipation: 9W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Case: PowerPAK® SO8
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.5A; 9W; PowerPAK® SO8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 4nC
On-state resistance: 95mΩ
Drain current: 6.5A
Power dissipation: 9W
Gate-source voltage: ±20V
Drain-source voltage: 100V
Case: PowerPAK® SO8
товару немає в наявності
В кошику
од. на суму грн.